Abstract
This paper describes the crystal structure and photochromism of Zn oxide films fabricated by sputtering-type electron cyclotron resonance microwave plasma. C-plane preferential orientation and (101) plane preferential orientation are achieved in Zn oxide films deposited on glass substrates below 200 °C. These films have strong crystallite orientation. Films with (101) plane orientation exhibit typical photochromic characteristics induced by x-ray irradiation. Photochromism is probably caused by a color center, that is, the oxygen vacancy in Zn oxide films. The absorption center exists in an energy range of 1.5 to 4 eV. The activation energy in the fading process is ∼0.03 eV.

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