Effect of point defect reactions on behavior of boron and oxygen in degenerately doped Czochralski silicon
- 7 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (23) , 2974-2976
- https://doi.org/10.1063/1.109161
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal GrowthJournal of the Electrochemical Society, 1992
- The mechanism of swirl defects formation in siliconJournal of Crystal Growth, 1982
- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977