Residue‐Free Reactive Ion Etching of 3 C ‐ SiC and 6 H ‐ SiC in Fluorinated Mixture Plasmas
- 1 August 1995
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 142 (8) , 2853-2860
- https://doi.org/10.1149/1.2050105
Abstract
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