Selectively Aligned Polymer Film Growth on Obliquely Evaporated SiO2 Pattern by Chemical Vapor Deposition
- 1 July 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (7B) , L980
- https://doi.org/10.1143/jjap.31.l980
Abstract
Polyazomethin films were grown by chemical vapor deposition using terephthalaldehyde and p-phenylenediamine gases on SiO2 film patterned in a 10-µm-wide stripe. When the SiO2 film was obliquely evaporated on a quartz substrate by tilting the substrate along the y-axis, while polymer chain alignment was random on the quartz, the chain on the SiO2 film aligned along the y-axis, which induced birefringence and dichroism selectively on the stripe pattern. When the SiO2 stripe was formed on a SiO2 film deposited by tilting the substrate along the x-axis, the chain direction in the stripe region was at right angles to that in the surrounding region.Keywords
This publication has 4 references indexed in Scilit:
- Quantum wire and dot formation by chemical vapor deposition and molecular layer deposition of one-dimensional conjugated polymerApplied Physics Letters, 1992
- Polymer films formed with monolayer growth steps by molecular layer depositionApplied Physics Letters, 1991
- Epitaxial growth of aligned polydiacetylene films on anisotropic orienting polymersApplied Physics Letters, 1990
- Highly oriented polydiacetylene films by vacuum depositionApplied Physics Letters, 1987