New OMCVD precursors for selective copper metallization
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 123-129
- https://doi.org/10.1109/vmic.1991.152975
Abstract
A novel OMCVD process for the highly selective deposition of pure, adherent, low resistivity copper films onto conductive substrates is described. Central to this process is a new volatile liquid copper/sup +1/ precursor, Cupra Select, designed to thermally disproportionate at low temperatures to cleanly give copper metal and volatile non-corrosive by-products. Thus, selective depositions onto metallic versus insulating dielectric substrates are achieved between 120 to 420 degrees C with growth rates in excess of 100 nm/min and grain sizes as low as 0.1 microns. In addition, a novel complementary copper etching process is discussed that is chemically compatible with the copper CVD chemistry.Keywords
This publication has 5 references indexed in Scilit:
- Exchange Coupling between Antiferromagnetic Mn–Ir and Ferromagnetic Ni–Fe LayersJapanese Journal of Applied Physics, 1996
- Chemical vapor deposition of copper from copper(I) trimethylphosphine compoundsChemistry of Materials, 1990
- Low-temperature chemical vapor deposition of high purity copper from an organometallic sourceChemistry of Materials, 1990
- Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applicationsJournal of Electronic Materials, 1990
- Diffusion of copper in thin TiN filmsThin Solid Films, 1982