Highly reliable AlGaAs semiconductor lasers with both facets dry-etched
- 5 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (1) , 69-71
- https://doi.org/10.1049/el:19890050
Abstract
Both cavity facets of AlGaAs semiconductor lasers were fabricated using a reactive ion beam etching (RIBE) technique. The etched mirror's reflectivity is estimated to be 0.24 and its scattering loss 0.15. Both facets dry-etched lasers at 70°C heat block temperature and 5mW light output power showed no remarkable deterioration for over 3500 h.Keywords
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