A 6 Watt Power GaAs FET for 14.0-14.5GHz Band
- 1 January 1987
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
An internally matched GaAs FET with output power above 38dBm(6.3W) and linear power gain above 5.8dB has been developed for the 14.0-14.5GHz band. These results were achieved by using high quality GaAs wafers prepared by molecular beam epitaxy (MBE) and optimizing the channel recess structure. Additionally, the package size of the FET was successfully reduced by using a high dielectric substrate for the internal matching circuits of both input and output .Keywords
This publication has 3 references indexed in Scilit:
- 2.5-Watt and 5- Watt Internally Matched GaAs FETs for 10.7-11.7 and 14-14.5 GHz BandsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High-Power Power GaAs and High-Efficiency Ion-Implanted FETs for C and X BandsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 10-GHz 10-W Internally Matched Flip-Chip GaAs Power FET'sIEEE Transactions on Microwave Theory and Techniques, 1981