Synthesis of TiB2 by High‐Dose Implantation of Boron Ions in Titanium Films
- 1 May 1983
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 66 (5) , C‐78-C‐79
- https://doi.org/10.1111/j.1151-2916.1983.tb10058.x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Crystal growth of borides and carbides of transition metals from molten aluminum solutionsJournal of Crystal Growth, 1976
- Increase inTcof Nb Films Implanted with N+2Japanese Journal of Applied Physics, 1975