Effects of (100)-Textured LaNiO3 Electrode on Crystallization and Properties of Sol-Gel-Derived Pb(Zr0.53Ti0.47)O3 Thin Films

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Abstract
Sol-gel-derived thin films of Pb(Zr0.53Ti0.47)O3 (PZT) were spin-coated onto the (100)-textured LaNiO3 (LNO) electrode which was deposited on a Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at 350° C. The annealing temperature for obtaining a perovskite PZT film on LNO was reduced by about 50° C compared with that direct deposition on Pt. Highly a- and c-axis-oriented PZT films were obtained by annealing at temperatures above 500° C, while randomly oriented films were formed on Pt electrode. Moreover, the grain size of PZT films grown on LNO was smaller than that of films on Pt. The dielectric constant, ε r, remanent polarization, P r, and coercive field, E c, of PZT films on LNO changed markedly with the annealing conditions. ε r increased and both P r and E c markedly decreased with increasing annealing temperature or time, which was attributed to the out-diffusion of LaNiO3 into PZT films during annealing. Use of the LNO layer as a bottom electrode was also found to greatly improve the fatigue property of PZT films.