Ultra-Shallow Buried-Channel P-MOSFET With Extremely High Transconductance

Publisher Website

1 January 1993

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 99-100
https://doi.org/10.1109/vlsit.1993.760264

Abstract

No abstract available

This publication has 1 reference indexed in Scilit:

Subquarter-micrometer gate-length p-channel and n-channel MOSFETs with extremely shallow source-drain junctions
IEEE Transactions on Electron Devices, 1989