X-Ray Topographic Study of Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method

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Abstract
X-ray topographic study has been made of GaAs epi-layers grown on GaAs substrates by the conventional LPE method. The observed defects are classified into four categories: (1) dislocations propagating into the epi-layer in normal fashion, (2) dislocations which bent towards the interface plane, (3) dislocations generated during the growth process, and (4) defects giving rise to black and white contrast on the X-ray topographs in contrast to the white images of the dislocations. The three dimensional distribution of the various defects was studied by examining the specimen after successively removing the epi-layers. The image contrast was found to change alternately, as the epi-layer was successively etched away, from purely white to black-white-black. Possible reasons for the origin of these defects are discussed.

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