Performance characteristics of diazo-type photoresists under e-beam and optical exposure
- 1 April 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (4) , 425-430
- https://doi.org/10.1109/t-ed.1978.19102
Abstract
The performance characteristics of three different diazotype positive photoresists such as Shipley AZ2400, Kodak 809, and Polychrome PC129, are compared after optical exposure and electron-beam exposure. The development rates for both e-beam and optically exposed resists are measured by an in-situ automated technique using the IBM Film Thickness Analyzer. The optical exposure parameters are obtained at three wavelengths (4358, 4047, and 3650) by computer-controlled transmission measurements. The optical exposure and development parameters permit direct quantitative comparisons for these photoresists. The development rates of e-beam and optically exposed resists are compared. Also a comparison of e-beam sensitivity between the three resist systems is made by studying the resist profile shape after development in the scanning-electron microscope (SEM).Keywords
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