Terahertz radiation from large aperture Si p-i-n diodes

Publisher Website
Google Scholar
Abstract
Subpicosecond electromagnetic pulses having THz bandwidths have been generated from large aperture Si p‐i‐n diodes under different biases by illumination with fs‐optical pulses. The amplitude and spectral bandwidth of the radiated pulses increases with the reverse bias on the p‐i‐n diode. This effect can be explained by the electric field dependence of the transient drift velocity of the photo‐generated carriers in the intrinsic region of the p‐i‐n diode.