Anisotropic magnetoresistance of GaAs two-dimensional holes
Abstract
Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures with in-plane magnetic fields (B) reveal positive magnetoresistance whose details depend on the direction of B relative to both the crystal axes and the current direction. The value of B at which the resistivity is nearly temperature-independent also depends on the orientation of B. To explain the data, the coupling of the orbital motion to B, as well as the anisotropic band structure of the holes and a re-population of the spin-subbands in the presence of B, need to be taken into account.Keywords
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