The localized vibrations of charged and uncharged impurities in GaAs and GaP
- 7 March 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (5) , L77-L79
- https://doi.org/10.1088/0022-3719/8/5/004
Abstract
Beryllium-doped GaAs grown by the liquid phase epitaxial technique shows an infrared absorption line due to the localized vibrations of 9BeGa at 482 cm-1. This is discussed in relation to vibrations of 9BeGa in GaP and boron in GaAs and GaP.Keywords
This publication has 10 references indexed in Scilit:
- The behaviour of boron impurities in n-type gallium arsenide and gallium phosphideJournal of Physics C: Solid State Physics, 1974
- Silicon-copper and silicon-zinc complexes in gallium phosphideJournal of Physics C: Solid State Physics, 1974
- Acceptor levels in gallium arsenide (luminescence measurements)Journal of Physics C: Solid State Physics, 1973
- Interstitial nitrogen defects in gallium phosphide (neutron and electron irradiation)Journal of Physics C: Solid State Physics, 1973
- Infrared absorption study of Li-diffused Mg-doped GaAsJournal of Applied Physics, 1972
- Localized vibrational modes in gallium arsenide containing silicon and boronJournal of Physics C: Solid State Physics, 1972
- Defect-Induced Lattice Vibrations in Zinc-Blende-type Crystals. A Modified Molecular-Model CalculationPhysical Review B, 1972
- Localized vibrational modes of light impurities in gallium phosphide. (Absorption spectra)Journal of Physics C: Solid State Physics, 1971
- Localized mode frequency for substitutional impurities in zinc blende type crystalsJournal of Physics and Chemistry of Solids, 1971
- Vibrational Modes of Defects in GaPJournal of Applied Physics, 1969