Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectance
- 1 March 1991
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 282-292
- https://doi.org/10.1117/12.24402
Abstract
Si/Ge superlattices provide the possibility to create a novel direct band gap semiconductor. The energies and oscillator strength of interband transitions are strongly affected by strain individual layer thicknesses and superlattice periodicity. We report on photoreflectance (PR) studies of SimGen superattices with a layer thickness ratio m/n1/3 and period lengths of 8 12 and 16 monolayers. Between 1. 9 and 2. 5 eV transitions which are related to the E1 gap are observed for all samples. In the infrared region between 0. 9 and 1. 2 eV superlattice induced interband transitions are observed for Si2Ge6.Keywords
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