Kinetics of dry oxidation of silicon. II. Conditions affecting the growth
- 15 June 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (12) , 5134-5141
- https://doi.org/10.1063/1.343192
Abstract
In part I, the kinetics of dry oxidation of silicon has been investigated and a new model based on the classical oxidation theory including space-charge effects is proposed. In part II, the power-of-time law is shown to fit to the experimental results and the major conditions affecting the growth are investigated. The dependence on crystallographic orientation, the ‘‘crossover’’ effect, the nonlinear oxygen pressure dependence, the enhancing anneal effect, the peculiar growth on 2-D structures, and the silicon surface pretreatment effect are examined. As a practical application the model predicts the location of structural thin spots in the gate oxide of a metal-oxide-silicon capacitor.This publication has 40 references indexed in Scilit:
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