p-type doped channel FETs using strained and lattice matched InAlAs/InGaAs heterostructures
- 1 January 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Lattice matched (x=0.53) and strained (x=0.65) In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As p-doped dual-channel FETs were fabricated and investigated experimentally. This material system offers a high carrier velocity and large bandgap discontinuity as required for high-speed operation. The design and the DC and high-frequency characteristics of the FETs are reported. The strained design enhances the intrinsic transconductance from 23 mS/mm to 46.5 mS/mm using 1.0- mu m-long gates. The cutoff frequency also improves from 1.0 GHz to 1.5 GHz.<>Keywords
This publication has 2 references indexed in Scilit:
- InP-based HIGFETs for complementary circuitsIEEE Transactions on Electron Devices, 1989
- GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain currentApplied Physics Letters, 1988