Effects of laser irradiation of GaAs observed by d.l.t.s.
- 30 August 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (18) , 553-554
- https://doi.org/10.1049/el:19790397
Abstract
A Q-switched ruby laser has been used to heat-treat vapourphase-epitaxial (v.p.e.) GaAs. The characteristic A-centre, a deep trapping level at 0.83 eV, is removed using a laser pulse of energy density 0.3 J cm−2. Trapping levels are observed using deep-level transient spectroscopy (d.l.t.s.).Keywords
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