Surface-tunneling-induced 1/ f noise in Hg1−xCdxTe photodiodes
- 1 July 1983
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 1 (3) , 1730-1734
- https://doi.org/10.1116/1.572213
Abstract
The reverse bias dark curent of Hg1−xCdxTe (MCT) photodiodes is often dominated by tunneling across a pinched off surface depletion region. The width of this critical region may be modulated by charge exchange with slow surface states in a passivant insulator. Numerical calculations give the correct order of magnitude for observed 1/ f noise in ZnS passivated MCT photodiodes.Keywords
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