Investigation of the reactive properties of diffused Si p-n junctions in the region of high injection levels and strong electric fields
- 1 February 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (2) , 233-239
- https://doi.org/10.1016/0038-1101(68)90084-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Some reactive effects in forward biased junctionsIRE Transactions on Electron Devices, 1959
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949