Inversion Domain Boundaries in GaN Grown on Sapphire
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Inversion domains in GaN grown on sapphireApplied Physics Letters, 1996
- Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3Journal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Growth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged speciesJournal of Applied Physics, 1994
- Inversion Domains in Aluminum NitrideJournal of the American Ceramic Society, 1991