High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency

26 February 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (5) , 228-230
https://doi.org/10.1049/el:19870160

Abstract

The effect of plasma excitation frequency on the deposition of amorphous hydrogenated silicon in a silane glow-discharge system is investigated. A large increase in the deposition rate up to 21 Å/s is observed in the range between 25 and 150 MHz. Optical and electrical film parameters remain practically unchanged over this frequency range.

Keywords

HIGH RATE DEPOSITION
25 TO 150 MHZ
AMORPHOUS SI:H
PECVD
ELECTRICAL FILM PARAMETERS
OPTICAL FILM PARAMETERS
SINH2N+2 GLOW DISCHARGE
DEPOSITION RATE
EFFECT OF PLASMA EXCITATION FREQUENCY

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