Amorphous GexH1−x bolometers
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4) , 1322-1326
- https://doi.org/10.1063/1.322834
Abstract
Selected materials from the amorphous GexH1−x system are evaluated at 300 K as thermistor bolometers operating at photon energies between approximately 0.2 and 2.5 eV. The devices are deposited on glass and sapphire substrates by rf sputtering of polycrystalline Ge in an argon‐hydrogen atmosphere. Their current‐voltage characteristics, their response times, the frequency and spectral dependence of their responsivities, and the frequency dependence of the noise in a 3‐Hz bandwidth are all measured. Response times between 1 and 10 msec and Dλ* (0.633, 13, 1)’s of between 5×106 and 5×107 W−1 Hz1/2 cm are obtained, using a calibrated He‐Ne laser (λ=0.633 μm) as an excitation source. (At this wavelength, all nonreflected incident light is absorbed.)This publication has 6 references indexed in Scilit:
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