Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized Silicon

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Abstract
The effects on fast surface states associated with structures due to anneals in nitrogen and hydrogen‐nitrogen ambients in the temperature range 300°–550°C are compared with similar anneals of structures. Results are reported in terms of capacitance‐voltage characteristics and surface recombination velocity values. Although the hydrogen‐nitrogen ambients are found effective in the 400°–450°C range for reduction of states in the nonmetallized structures ( for (111) p‐type silicon), the final densities are not as low as those found for the structures involving aluminum field plates . The role of hydrogen in the reduction of fast surface states is discussed.