Thermal performance of a dual 1.2 kV, 400 a silicon-carbide MOSFET power module
- 1 February 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Power electronics are reaching the temperature limits of silicon; therefore alternative materials such as silicon carbide (SiC) are currently being explored. An all SiC 1.2 kV, 400 A dual MOSFET power module has been fabricated and tested for thermal performance. The module was designed as a dropin replacement for standard commercial modules with an integrated liquid cooling system that reduces thermal resistance. The heat sink has been experimentally tested up to 400 A (158 W/cm 2 ) showing a device temperature rise of as little as 24°C. Thermal modeling was also performed and the results were compared to experimental data.Keywords
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