Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements
- 15 September 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (12) , 7515-7518
- https://doi.org/10.1103/physrevb.46.7515
Abstract
The distribution of gap states has been obtained from subgap absorption measurements in ion-implanted Si and GaAs layers and the changes induced by increasing the implantation ion dose have been monitored. The variations in slope which are observed with increasing dose in the spectral region at energies lower than the band-edge region are shown to be mainly affected by a shift of the energy position of the peak of the calculated distributions.Keywords
This publication has 12 references indexed in Scilit:
- Ion dose effect in subgap absorption spectra of defects in ion implanted GaAs and SiJournal of Applied Physics, 1991
- Surface states and buried interface states studies in semiconductors by photothermal deflection spectroscopyJournal of Applied Physics, 1991
- Application of optical transmission spectroscopy to the investigation of defects in ion implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAsPhysica Status Solidi (a), 1986
- Density-of-states distribution in the mobility gap of a-Si:HJournal of Non-Crystalline Solids, 1985
- Determination of the gap-state distribution of hydrogenated amorphous silicon alloys from sub-band-gap absorption measurementsPhysical Review B, 1985
- Recombination centers in phosphorous doped hydrogenated amorphous siliconSolid State Communications, 1982
- SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPYLe Journal de Physique Colloques, 1981
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980