Characterization of molybdenum disilicide/gallium arsenide Schottky barrier contacts at elevated temperatures

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Abstract
The effects of heat treatment up to 800 °C on planar magnetron sputter-deposited MoSi2 Schottky barrier contacts to n-type GaAs were studied to determine the feasibility of using MoSi2 as the high thermal stability Schottky contact in a self-aligned-gate GaAs MESFET process. Current-voltage data for MoSi2–GaAs Schottky barrier diodes revealed a decreasing barrier height and an increasing ideality factor above 500 °C. Auger electron, Rutherford backscattering, ion microprobe, and cross-sectional TEM analyses were used to detect Ga and As out-diffusion into MoSi2 at T≥550 and 600 °C, respectively. The MoSi2–GaAs interface exhibited increasing broadening with increasing annealing temperature. The electrical degradation above 500 °C is believed to be the result of the formation of an n+ surface layer by the diffusion of Si from MoSi2 into GaAs.

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