Process induced oxide damage and its implications to device reliability of submicron transistors
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Adverse effects of plasma based process steps on the gate oxide and device reliability are discussed. Two aspects of this process induced damage are: (a) antenna effects due to the large areas of conductors connected to the gate in a dense circuit, and (b) progressive deterioration of the gate oxide during processing. It is shown that large areas of conductors can act as antennas and degrade the hot carrier reliability of the transistors due to the process induced damage to the gate oxide. Constant gate current stress experiments show that this degradation is cumulative as the wafers are being processed through the backend of the process flow.Keywords
This publication has 3 references indexed in Scilit:
- A model and experiments for thin oxide damage from wafer charging in magnetron plasmasIEEE Electron Device Letters, 1992
- Thin-oxide damage from gate charging during plasma processingIEEE Electron Device Letters, 1992
- Thin oxide damage by plasma etching and ashing processesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992