Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 32 (12) , 2148-2155
- https://doi.org/10.1109/3.544762
Abstract
No abstract availableKeywords
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