Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology
- 7 November 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 53 (11) , 3557-3561
- https://doi.org/10.1109/tmtt.2005.858379
Abstract
This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-/spl mu/m standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dBm at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.Keywords
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