Erratum: ‘‘Enhancement of low-temperature critical epitaxial thickness of Si(100) with ion beam sputtering’’ [Appl. Phys. Lett. 62, 570 (1993)]
- 5 July 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (1) , 120
- https://doi.org/10.1063/1.110819
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