Toward a Germanium Laser for Integrated Silicon Photonics
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- 13 October 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 16 (1) , 124-131
- https://doi.org/10.1109/jstqe.2009.2027445
Abstract
It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs.Keywords
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