Radiation Damage to Integrated Injection Logic Cells

1 December 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 22 (6) , 2600-2604
https://doi.org/10.1109/TNS.1975.4328175

Abstract

The effects of neutron and total dose gamma irradiations on the electrical characteristics of an integrated injection logic (I2L) cell and an I2L multiple inverter circuit were investigated. These units were designed and fabricated to obtain circuit development information and did not have radiation hardness as a goal. The following parameters of the test structures were measured as a function of total dose and neutron fluence: the dc common-base current gain of the lateral pnp transistor; the dc common-emitter current gain of the vertical npn transistor; the forward current-voltage characteristics of the injector-substrate junction, and the propagation delay versus power dissipation per gate for the multiple inverter circuit. The limitations of the present test structures in a radiation environment and possible hardening techniques are discussed.

Keywords

This publication has 2 references indexed in Scilit:

Gamma radiation effects on integrated injection logic cells
IEEE Transactions on Electron Devices, 1975
Integrated injection logic-present and future
IEEE Journal of Solid-State Circuits, 1974