Impurity scavenging by foreign phase in heterogeneous CuInS2
- 30 June 1986
- journal article
- Published by Elsevier in Materials Letters
- Vol. 4 (4) , 198-200
- https://doi.org/10.1016/0167-577x(86)90096-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- N ‐ CuInS2 / Sulfide ‐ Polysulfide Electrochemical Photovoltaic CellsJournal of the Electrochemical Society, 1985
- Ternary Chalcogenide‐Based Photoelectrochemical Cells: IV . Further Characterization of the Polysulfide SystemsJournal of the Electrochemical Society, 1985
- A novel method to grow large CuInS2 single crystalsJournal of Crystal Growth, 1984
- Surface modification of polycrystalline p-CuInS2 and p-CuInSe2 electrodes for improved solar cell performanceSolar Energy Materials, 1983
- Photovoltaic properties of p-n junctions in CuInS2Journal of Applied Physics, 1979
- EPR characterization of optical-quality AgGaS2 grown from the meltApplied Physics Letters, 1978
- CuInS2 Liquid Junction Solar CellsJournal of the Electrochemical Society, 1978
- CuInS2 thin-film homojunction solar cellsJournal of Applied Physics, 1977
- ESR and x-ray analysis of the ternary semiconductors CuAlS2, CuInS2 and AgGaS2Solid State Communications, 1973
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964