ZnS1-xOx:Mn and ZnS1-xSex:Mn as thin-film electroluminescent materials
- 1 August 1988
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (8) , 816-818
- https://doi.org/10.1088/0268-1242/3/8/015
Abstract
Thin films of ZnS1-xOx and ZnS1-xSex have been deposited on to p-Si by radio-frequency sputtering either a solid target of ZnS in Ar/O2 mixtures or solid targets of ZnS and ZnSe. Both types of ternary compound are more conducting than pure ZnS, and thus potentially useful for DC electroluminescence. The ZnS1-xOx films prepared in O2/Ar mixtures greater than 2% O2 are too conducting for electroluminescent devices; gas mixtures containing only fractional percentages of O2 will yield appropriate conductivities. For ZnS1-xSex films the ideal value of x lies between 0.01 and 0.05.Keywords
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