A unified wide temperature range model for the energy gap, the effective carrier mass and intrinsic concentration in silicon
- 31 October 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (10) , 1379-1384
- https://doi.org/10.1016/0038-1101(93)90046-s
Abstract
No abstract availableKeywords
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