Optically pumped In 0.53 Ga 0.47 As/InP MQW lasers grown by chloride vapour-phase epitaxy
- 5 January 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (1) , 48-50
- https://doi.org/10.1049/el:19840034
Abstract
The lasing characteristics of optically pumped In0.53Ga0.47As/InP MQW structures grown by chloride vapour-phase epitaxy were investigated. A detailed examination of the stimulated emission spectra shows that the MQW structures have good heterointerface properties.Keywords
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