The preparation and passive annealing of Cd3As2 platelets
- 1 December 1979
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 57 (12) , 2093-2095
- https://doi.org/10.1139/p79-284
Abstract
Single crystals of Cd3As2 have been grown from the vapour phase using hydrogen gas and then annealed under vacuum at 425 °C. The anneal of thin samples always causes the Fermi energy to rise to 0.25 eV (n ~ 3.3 × 1018/cm3). The latter then decreases at a rate of 1.5–5 meV/week to 0.052 eV(n ~ 1.5 × 1017/cm3) or lower.Keywords
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