CF X (X=1–3) radical densities during Si, SiO2, and Si3N4 etching employing electron cyclotron resonance CHF3 plasma
- 1 May 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 15 (3) , 568-572
- https://doi.org/10.1116/1.580685
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: