Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation
- 1 July 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (1) , 198-204
- https://doi.org/10.1063/1.370717
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
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