Transient temperature rise in silicon semiconductor devices
- 1 January 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 22 (1) , 20-22
- https://doi.org/10.1109/T-ED.1975.18065
Abstract
The temperature rise in silicon devices under pulsed power conditions is calculated by a numerical method which takes into account the nonlinear properties of the materials. Power is assumed to be dissipated in a thin but finite layer at the surface of a one-dimensional structure. The effect of various types of heat sinks on the peak temperature rise is shown.Keywords
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