Electron-phonon interaction in semiconductor superlattices

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Abstract
Scattering rates of electrons in GaAs/AlAs superlattices are calculated in an envelope-function approximation which almost completely reproduces long-wavelength optical phonons. The results are compared with those obtained in the bulk-phonon model and the dielectric continuum model, which shows that the dielectric continuum model can provide an accurate estimate of the strength of electron-phonon scattering and that even the bulk-phonon model explains the layer thickness dependence reasonably well. The underlying physics leading to this result is discussed.