Effect of Pressure on the Electrical Properties of Bismuth
- 1 October 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (11) , 4335-4337
- https://doi.org/10.1063/1.1709124
Abstract
The magnetoresistance, Hall effect, and electrical conductivity of bismuth have been investigated to 90 kbar. In phase I, the application of pressure decreases the number of carriers; pressure increases the hole mobility so that both electrons and holes are approximately equally mobile just before the I–II transformation occurs. These observations may be explained by an upward shift of the light carrier bands relative to the heavy carrier bands. The magnetoresistance and Hall coefficients indicate simple metallic behavior for phases II, III, and IV.This publication has 6 references indexed in Scilit:
- Magnetogalvanic Measurements to 60 000 BarReview of Scientific Instruments, 1965
- Study of Electronic Band Structures by Tunneling Spectroscopy: BismuthPhysical Review Letters, 1965
- Galvanomagnetic Effects in BismuthPhysical Review B, 1956
- CXXXIV. Superconductivity at very high pressuresJournal of Computers in Education, 1953
- Compressions to 50,000 kg/Physical Review B, 1940
- Applications of the Bloch theory to the study of alloys and of the properties of bismuthProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1934