Part II-Electrochemical Techniques for Fabrication of Surface-Barrier Transistors

• 1 December 1953
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
• Vol. 41  (12) , 1706-1708
• https://doi.org/10.1109/JRPROC.1953.274352

Abstract

Keywords

• FABRICATION
• ETCHING
• GERMANIUM
• ELECTRODES
• GLASS
• CONDUCTIVITY
• THICKNESS CONTROL
• PERFORMANCE GAIN
• FREQUENCY
• ELECTROCHEMICAL PROCESSES