Electroabsorption in GaInAsP
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11) , 744-746
- https://doi.org/10.1063/1.90657
Abstract
Electroabsorption, or the Franz‐Keldysh effect, has been measured in Ga0.24In0.76As0.52P0.48 with an energy gap of 1.03 eV. Absorption coefficients were determined by measuring the transmission versus bias through a double‐heterostructure photodiode. The results are in good agreement with theory and are particularly applicable to modulators and detectors in the 1.25–1.30‐μm band of interest in optical‐fiber transmission.Keywords
This publication has 2 references indexed in Scilit:
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- Electroabsorption in GaAs and its application to waveguide detectors and modulatorsApplied Physics Letters, 1976