In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures
- 1 April 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 174 (1-4) , 564-571
- https://doi.org/10.1016/s0022-0248(97)00020-1
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectanceJournal of Applied Physics, 1995
- In situ spectral reflectance monitoring of III-V epitaxyJournal of Electronic Materials, 1994
- Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurementsJournal of the Optical Society of America A, 1993