Effect of dislocation density on integrated intensity of X-ray scattering by silicon crystals in Laue geometry
- 1 January 1983
- journal article
- Published by International Union of Crystallography (IUCr) in Acta Crystallographica Section A Foundations of Crystallography
- Vol. 39 (1) , 116-122
- https://doi.org/10.1107/s0108767383000203
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: