An optically-detected magnetic resonance investigation of recombination emission in indium doped zinc sulphide

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Abstract
Optically-detected magnetic resonance experiments at 2K on indium-doped hexagonal zinc sulphide distinguished two broad emission bands that are due to recombination between donors and acceptors. For the first band, which peaks at 1.94 eV, the recombination is between indium centres that act as deep-lying donors and A centres that act as deep-lying acceptors. For the second band, which peaks at 2.34 eV, the indium centres again act as donors but the acceptor centres are in this case unidentified. The indium donor level is estimated to lie at 0.4 to 0.6 eV beneath the conduction band and the indium ions are associated with perturbing defects at the nearest cation sites.