Structural relaxation as a tool for probing the origin of electronic gap states in amorphous chalcogenides
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 831-836
- https://doi.org/10.1016/0022-3093(80)90303-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The viscosity and structural relaxation rate of evaporated amorphous seleniumJournal of Applied Physics, 1978
- Photoelectronic behavior of-Se and some-Se: As alloys in their glass transition regionsPhysical Review B, 1978
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975